- 产品型号 TK31Z60X,S1F
- 品牌 Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- 描述 X35 PB-F POWER MOSFET TRANSISTOR
- 分类 单 FET、MOSFET
-
PDF
- 库存 1
技术参数
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
- Rds On (Max) @ Id, Vgs 88mOhm @ 9.4A, 10V
- Power Dissipation (Max) 230W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 1.5mA
- Supplier Device Package TO-247-4L(T)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


