技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Operating Temperature 175°C
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 38A (Tc)
• Rds On (Max) @ Id, Vgs 7.5mOhm @ 19A, 10V
• Power Dissipation (Max) 610mW (Ta), 61W (Tc)
• Vgs(th) (Max) @ Id 2.4V @ 200µA
• Supplier Device Package 8-TSON Advance (3.1x3.1)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 20 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)