技术参数

• Package / Case 10-SMD, No Lead
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Common Drain
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.8W (Ta)
• Drain to Source Voltage (Vdss) 12V
• Current - Continuous Drain (Id) @ 25°C 20A (Ta)
• Rds On (Max) @ Id, Vgs 2.85mOhm @ 5A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 30nC @ 3.8V
• FET Feature Logic Level Gate, 2.5V Drive
• Vgs(th) (Max) @ Id 1.3V @ 1mA
• Supplier Device Package 10-WLCSP (1.84x1.96)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant