技术参数

• Package / Case 6-WDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 P-Channel (Dual)
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 1W (Ta)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 4A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 480pF @ 10V
• Rds On (Max) @ Id, Vgs 45mOhm @ 3.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 6.74nC @ 4.5V
• FET Feature Logic Level Gate, 1.8V Drive
• Vgs(th) (Max) @ Id 1.2V @ 1mA
• Supplier Device Package 6-µDFN (2x2)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant