技术参数

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual), Schottky
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 15V, 2650pF @ 15V
• Rds On (Max) @ Id, Vgs 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
• Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 56nC @ 10V
• Vgs(th) (Max) @ Id 2.4V @ 250µA, 2.3V @ 250µA
• Supplier Device Package 8-PowerPair® (6x5)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status ROHS3 Compliant