技术参数

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
• Drain to Source Voltage (Vdss) 25V
• Current - Continuous Drain (Id) @ 25°C 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 13V, 5105pF @ 13V
• Rds On (Max) @ Id, Vgs 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V
• Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V, 104nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 320µA, 3V @ 1mA
• Supplier Device Package 8-PQFN (5x6)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant