技术参数

• Package / Case 6-SMD, Flat Leads
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 500mW (Ta)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 1.6A (Ta), 1.4A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 180pF @ 15V, 120pF @ 15V
• Rds On (Max) @ Id, Vgs 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
• Gate Charge (Qg) (Max) @ Vgs 5.1nC @ 10V, 2.9nC @ 10V
• FET Feature Logic Level Gate, 4V Drive
• Vgs(th) (Max) @ Id 2.6V @ 1mA, 2V @ 1mA
• Supplier Device Package UF6
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant