技术参数

• Package / Case 6-SMD, Flat Leads
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 500mW (Ta)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 500mA (Ta), 330mA (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 46pF @ 10V, 43pF @ 10V
• Rds On (Max) @ Id, Vgs 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 1.23nC @ 4V, 1.2nC @ 4V
• FET Feature Logic Level Gate, 1.5V Drive
• Vgs(th) (Max) @ Id 1V @ 1mA
• Supplier Device Package UF6
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant