技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 150mW (Ta)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 800mA (Ta), 720mA (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 90pF @ 10V, 110pF @ 10V
• Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V, 1.76nC @ 4.5V
• FET Feature Logic Level Gate, 1.5V Drive
• Vgs(th) (Max) @ Id 1V @ 1mA
• Supplier Device Package ES6
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant