技术参数

• Package / Case Die
• Mounting Type Surface Mount, Wettable Flank
• Configuration N and P-Channel, Common Drain
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 48W (Tc), 60W (Tc)
• Drain to Source Voltage (Vdss) 40V, 200V
• Current - Continuous Drain (Id) @ 25°C 30A (Tc), 20A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
• Rds On (Max) @ Id, Vgs 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
• Gate Charge (Qg) (Max) @ Vgs 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
• Vgs(th) (Max) @ Id 2.5V @ 250µA, 3.5V @ 250µA
• Supplier Device Package Die
• Grade Automotive
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status ROHS3 Compliant