Technical Details

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.4W (Ta), 5.7W (Tc)
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 527pF @ 30V, 436pF @ 30V
• Rds On (Max) @ Id, Vgs 103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V
• Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V, 9nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package 8-SOP