- Product Model MT3S111(TE85L,F)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description RF TRANS NPN 6V 11.5GHZ SMINI
- Classification Bipolar RF Transistors
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Inventory:10477
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Transistor Type NPN
- Operating Temperature 150°C (TJ)
- Gain 12dB
- Power - Max 700mW
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
- Frequency - Transition 11.5GHz
- Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
- Supplier Device Package S-Mini
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