- Product Model CSD86336Q3DT
- Brand Texas Instruments
- RoHS Yes
- Description MOSFET 2N-CH 25V 20A 8VSON
- Classification FET, MOSFET Arrays
Inventory:1501
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -55°C ~ 125°C
- Technology MOSFET (Metal Oxide)
- Power - Max 6W
- Drain to Source Voltage (Vdss) 25V
- Current - Continuous Drain (Id) @ 25°C 20A (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 494pF @ 12.5V, 970pF @ 12.5V
- Rds On (Max) @ Id, Vgs 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
- Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 45V, 7.4nC @ 45V
- FET Feature Logic Level Gate, 5V Drive
- Vgs(th) (Max) @ Id 1.9V @ 250µA, 1.6V @ 250µA
- Supplier Device Package 8-VSON (3.3x3.3)