- Product Model SSM6N35AFE,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET 2N-CH 20V 0.25A ES6
- Categories FET, MOSFET Arrays
-
PDF
- In Stock 83709
Technical Details
- Package / Case SOT-563, SOT-666
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- Power - Max 250mW
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 36pF @ 10V
- Rds On (Max) @ Id, Vgs 1.1Ohm @ 150mA, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 0.34nC @ 4.5V
- FET Feature Logic Level Gate, 1.2V Drive
- Vgs(th) (Max) @ Id 1V @ 100µA
- Supplier Device Package ES6
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


