- Product Model SSM6J216FE,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET P-CHANNEL 12V 4.8A ES6
- Categories Single FETs, MOSFETs
- In Stock 800
Technical Details
- Package / Case SOT-563, SOT-666
- Mounting Type Surface Mount
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 4.8A (Ta)
- Rds On (Max) @ Id, Vgs 32mOhm @ 3.5A, 4.5V
- Power Dissipation (Max) 700mW (Ta)
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package ES6
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 12 V
- Gate Charge (Qg) (Max) @ Vgs 12.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1040 pF @ 12 V
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


