- Product Model EPC2105
- Brand EPC
- RoHS Yes
- Description GANFET 2N-CH 80V 9.5A/38A DIE
- Classification FET, MOSFET Arrays
-
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Inventory:2966
Technical Details
- Package / Case Die
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) 80V
- Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
- Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V, 1100pF @ 40V
- Rds On (Max) @ Id, Vgs 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
- Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V, 10nC @ 5V
- Vgs(th) (Max) @ Id 2.5V @ 2.5mA, 2.5V @ 10mA
- Supplier Device Package Die
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