Technical Details

• Package / Case Die
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss) 80V
• Current - Continuous Drain (Id) @ 25°C 28A
• Input Capacitance (Ciss) (Max) @ Vds 760pF @ 40V
• Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 5V
• Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V
• Vgs(th) (Max) @ Id 2.5V @ 7mA
• Supplier Device Package Die