- Product Model TK4R3A06PL,S4X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 60V 68A TO220SIS
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 19
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 68A (Tc)
- Rds On (Max) @ Id, Vgs 7.2mOhm @ 15A, 4.5V
- Power Dissipation (Max) 36W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 500µA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 48.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3280 pF @ 30 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- RoHS Status ROHS3 Compliant


