- Product Model EPC2110
- Brand EPC
- RoHS Yes
- Description GANFET 2N-CH 120V 3.4A DIE
- Classification FET, MOSFET Arrays
-
PDF
Technical Details
- Package / Case Die
- Configuration 2 N-Channel (Dual) Common Source
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) 120V
- Current - Continuous Drain (Id) @ 25°C 3.4A
- Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
- Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V
- Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
- Vgs(th) (Max) @ Id 2.5V @ 700µA
- Supplier Device Package Die
Related Products
GANFET N-CH 100V 18A DIE
Inventory: 102469
GANFET N-CH 100V 1.7A DIE
Inventory: 24334
TRANS GAN 200V DIE 43MOHM
Inventory: 18274
GANFET 2N-CH 60V 23A DIE
Inventory: 3615
GANFET 2N-CH 100V 23A DIE
Inventory: 4416
GANFET 3 N-CH 100V 9BGA
Inventory: 5402
GAN TRANS 200V 8MOHM BUMPED DIE
Inventory: 8818
GANFET 2N-CH 100V 5A DIE
Inventory: 5088
TRANS GAN 150V .003OHM 3X5MM QFN
Inventory: 1100
