Technical Details

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.5W
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 5.1A, 3.2A
• Input Capacitance (Ciss) (Max) @ Vds 419pF @ 10V
• Rds On (Max) @ Id, Vgs 55mOhm @ 5.1A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
• FET Feature Logic Level Gate, 2.5V Drive
• Vgs(th) (Max) @ Id 1.4V @ 110µA
• Supplier Device Package PG-TSDSON-8
• Grade Automotive
• Qualification AEC-Q101