Technical Details

• Package / Case 6-XFDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 285mW
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 590mA
• Input Capacitance (Ciss) (Max) @ Vds 30.3pF @ 15V
• Rds On (Max) @ Id, Vgs 670mOhm @ 590mA, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 1.05nC @ 4.5V
• Vgs(th) (Max) @ Id 950mV @ 250µA
• Supplier Device Package DFN1010B-6