Technical Details

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type NPN - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max) 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA, 5V
• Supplier Device Package TO-236AB
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 320 mW
• Frequency - Transition 225 MHz
• Resistor - Base (R1) 4.7 kOhms
• Resistor - Emitter Base (R2) 4.7 kOhms