- Product Model TPN13008NH,L1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 80V 18A 8TSON
- Categories Single FETs, MOSFETs
- In Stock 10491
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Rds On (Max) @ Id, Vgs 13.3mOhm @ 9A, 10V
- Power Dissipation (Max) 700mW (Ta), 42W (Tc)
- Vgs(th) (Max) @ Id 4V @ 200µA
- Supplier Device Package 8-TSON Advance (3.1x3.1)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 40 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status RoHS Compliant


