- Product Model CSD85312Q3E
- Brand Texas Instruments
- RoHS Yes
- Description MOSFET 2N-CH 20V 39A 8VSON
- Classification FET, MOSFET Arrays
Inventory:9303
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual) Common Source
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 2.5W
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 39A
- Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 10V
- Rds On (Max) @ Id, Vgs 12.4mOhm @ 10A, 8V
- Gate Charge (Qg) (Max) @ Vgs 15.2nC @ 4.5V
- FET Feature Logic Level Gate, 5V Drive
- Vgs(th) (Max) @ Id 1.4V @ 250µA
- Supplier Device Package 8-VSON (3.3x3.3)