Inventory:110537

Technical Details

  • Package / Case 6-XFDFN Exposed Pad
  • Mounting Type Surface Mount
  • Configuration N and P-Channel Complementary
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • Power - Max 265mW
  • Drain to Source Voltage (Vdss) 20V
  • Current - Continuous Drain (Id) @ 25°C 600mA, 500mA
  • Input Capacitance (Ciss) (Max) @ Vds 21.3pF @ 10V
  • Rds On (Max) @ Id, Vgs 620mOhm @ 600mA, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
  • FET Feature Logic Level Gate
  • Vgs(th) (Max) @ Id 950mV @ 250µA
  • Supplier Device Package DFN1010B-6

Related Products


MOSFET N/P-CH 20V 3.4A 6TSOP

Inventory: 162187

MOSFET 2P-CH 20V 1.03A SOT563

Inventory: 763966

MOSFET N/P-CH 20V 0.22A 6XLLGA

Inventory: 0

MOSFET N/P-CH 20V 0.22A SOT963

Inventory: 31934

MOSFET 2N-CH 60V 0.22A 6TSSOP

Inventory: 43800

MOSFET N/P-CH 20V 0.6A 6DFN

Inventory: 5164

MOSFET 2N-CH 20V 0.6A 6DFN

Inventory: 19496

MOSFET 2N-CH 20V 0.6A 6DFN

Inventory: 14951

Top