- Product Model 2SK2009TE85LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 30V 200MA SC59-3
- Classification Single FETs, MOSFETs
Inventory:3352
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
- Rds On (Max) @ Id, Vgs 2Ohm @ 50MA, 2.5V
- Power Dissipation (Max) 200mW (Ta)
- Vgs(th) (Max) @ Id 1.5V @ 100µA
- Supplier Device Package SC-59-3
- Drive Voltage (Max Rds On, Min Rds On) 2.5V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Input Capacitance (Ciss) (Max) @ Vds 70 pF @ 3 V
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