- Product Model PMDPB38UNE,115
- Brand NXP Semiconductors
- RoHS Yes
- Description MOSFET 2N-CH 20V 4A 6HUSON
- Classification FET, MOSFET Arrays
Inventory:1500
Technical Details
- Package / Case 6-UDFN Exposed Pad
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 510mW
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 4A
- Input Capacitance (Ciss) (Max) @ Vds 268pF @ 10V
- Rds On (Max) @ Id, Vgs 46mOhm @ 3A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 4.4nC @ 4.5V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 1V @ 250µA
- Supplier Device Package 6-HUSON (2x2)