Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 250W
• Drain to Source Voltage (Vdss) 600V
• Current - Continuous Drain (Id) @ 25°C 36A
• Input Capacitance (Ciss) (Max) @ Vds 7290pF @ 25V
• Rds On (Max) @ Id, Vgs 83mOhm @ 18A, 10V
• Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V
• Vgs(th) (Max) @ Id 5V @ 3mA
• Supplier Device Package Module