Technical Details

• Package / Case SP3
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 462W
• Drain to Source Voltage (Vdss) 600V
• Current - Continuous Drain (Id) @ 25°C 95A
• Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 25V
• Rds On (Max) @ Id, Vgs 24mOhm @ 47.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
• Vgs(th) (Max) @ Id 3.9V @ 5mA
• Supplier Device Package SP3