Technical Details

• Package / Case Die
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Gain 5.2dB
• Power - Max 250mW
• Current - Collector (Ic) (Max) 80mA
• Voltage - Collector Emitter Breakdown (Max) 4V
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 2V
• Frequency - Transition 16GHz
• Supplier Device Package Die