Technical Details

• Package / Case PowerPAK® ChipFET™ Dual
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 8.3W
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 6A
• Input Capacitance (Ciss) (Max) @ Vds 520pF @ 10V
• Rds On (Max) @ Id, Vgs 39mOhm @ 4.4A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package PowerPAK® ChipFet Dual