- Product Model SI5513CDC-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N/P-CH 20V 4A/3.7A 1206-8
- Classification FET, MOSFET Arrays
-
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Technical Details
- Package / Case 8-SMD, Flat Leads
- Mounting Type Surface Mount
- Configuration N and P-Channel
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 3.1W
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 4A, 3.7A
- Input Capacitance (Ciss) (Max) @ Vds 285pF @ 10V
- Rds On (Max) @ Id, Vgs 55mOhm @ 4.4A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 5V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Supplier Device Package 1206-8 ChipFET™
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