Technical Details

• Package / Case i4-Pac™-5
• Mounting Type Through Hole
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 125W
• Drain to Source Voltage (Vdss) 200V
• Current - Continuous Drain (Id) @ 25°C 26A, 17A
• Input Capacitance (Ciss) (Max) @ Vds 2720pF @ 25V
• Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V
• Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
• Vgs(th) (Max) @ Id 5V @ 250µA
• Supplier Device Package ISOPLUS i4-PAC™