- Product Model SSM6K202FE,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 30V 2.3A ES6
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 19881
Technical Details
- Package / Case SOT-563, SOT-666
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
- Rds On (Max) @ Id, Vgs 85mOhm @ 1.5A, 4V
- Power Dissipation (Max) 500mW (Ta)
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package ES6
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
- Vgs (Max) ±12V
- Drain to Source Voltage (Vdss) 30 V
- Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


