- Product Model SSM3K123TU,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 20V 4.2A UFM
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 25803
Technical Details
- Package / Case 3-SMD, Flat Leads
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
- Rds On (Max) @ Id, Vgs 28mOhm @ 3A, 4V
- Power Dissipation (Max) 500mW (Ta)
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package UFM
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
- Vgs (Max) ±10V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 13.6 nC @ 4 V
- Input Capacitance (Ciss) (Max) @ Vds 1010 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


