Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 220A
• Input Capacitance (Ciss) (Max) @ Vds 24200pF @ 800V
• Rds On (Max) @ Id, Vgs 4.44mOhm @ 280A, 18V
• Gate Charge (Qg) (Max) @ Vgs 800nC @ 18V
• Vgs(th) (Max) @ Id 5.1V @ 112mA
• Supplier Device Package AG-62MMHB