Technical Details

• Package / Case 6-XFDFN Exposed Pad
• Mounting Type Surface Mount
• Transistor Type 2 NPN - Pre-Biased
• Power - Max 230mW
• Current - Collector (Ic) (Max) 100mA
• Voltage - Collector Emitter Breakdown (Max) 50V
• Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max) 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
• Frequency - Transition 230MHz
• Resistor - Base (R1) 4.7kOhms
• Resistor - Emitter Base (R2) 47kOhms
• Supplier Device Package DFN1010B-6
• Grade Automotive
• Qualification AEC-Q101