Technical Details

• Package / Case 9-PowerWDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 58A (Ta), 379A (Tc)
• Rds On (Max) @ Id, Vgs 0.45mOhm @ 30A, 7V
• Power Dissipation (Max) 2.1W (Ta), 89W (Tc)
• Vgs(th) (Max) @ Id 2V @ 432µA
• Supplier Device Package PG-WHTFN-9
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V
• Vgs (Max) ±7V
• Drain to Source Voltage (Vdss) 15 V
• Gate Charge (Qg) (Max) @ Vgs 55 nC @ 7 V
• Input Capacitance (Ciss) (Max) @ Vds 6240 pF @ 7.5 V