Technical Details

• Package / Case 6-XFDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 280mW (Ta), 6W (Tc)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 43.6pF @ 10V, 53.5pF @ 10V
• Rds On (Max) @ Id, Vgs 320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V, 0.8nC @ 4.5V
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package DFN1010B-6