Technical Details

• Package / Case 6-UFBGA, DSBGA
• Mounting Type Surface Mount
• Configuration 2 P-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 800mW
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 1.2A
• Input Capacitance (Ciss) (Max) @ Vds 195pF @ 10V
• Rds On (Max) @ Id, Vgs 100mOhm @ 1A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package 6-DSBGA (1x1.5)