Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 4 N-Channel (Three Level Inverter)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 602W (Tc), 395W (Tc)
• Drain to Source Voltage (Vdss) 1700V (1.7kV), 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 124A (Tc), 89A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 1000V, 3020pF @ 1000V
• Rds On (Max) @ Id, Vgs 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V
• Gate Charge (Qg) (Max) @ Vgs 356nC @ 20V, 232nC @ 20V
• Vgs(th) (Max) @ Id 3.2V @ 5mA, 2.8V @ 3mA
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected