Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 4 N-Channel (Three Level Inverter)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 1.846kW (Tc), 1.161kW (Tc)
• Drain to Source Voltage (Vdss) 1200V (1.2kV), 700V
• Current - Continuous Drain (Id) @ 25°C 472A (Tc), 442A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 18100pF @ 1000V, 18000pF @ 700V
• Rds On (Max) @ Id, Vgs 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V
• Gate Charge (Qg) (Max) @ Vgs 1392nC @ 20V, 860nC @ 20V
• Vgs(th) (Max) @ Id 2.8V @ 18mA, 2.4V @ 16mA
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected