Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 4 N-Channel (Three Level Inverter)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 1.012kW (Tc), 662W (Tc)
• Drain to Source Voltage (Vdss) 1700V (1.7kV), 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 226A (Tc), 163A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 1000V, 6040pF @ 1000V
• Rds On (Max) @ Id, Vgs 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
• Gate Charge (Qg) (Max) @ Vgs 712nC @ 20V, 464nC @ 20V
• Vgs(th) (Max) @ Id 3.2V @ 10mA, 2.8V @ 6mA
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected