- Product Model GC11N65D5
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET N-CH 650V 11A DFN5*6-8L
- Categories Single FETs, MOSFETs
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PDF
- In Stock 10000
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
- Power Dissipation (Max) 78W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package 8-DFN (4.9x5.75)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- ECCN EAR99
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant


