Technical Details

• Package / Case SP1
• Mounting Type Chassis Mount
• Configuration 4 N-Channel (Full Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 208W
• Drain to Source Voltage (Vdss) 1000V (1kV)
• Current - Continuous Drain (Id) @ 25°C 11A
• Input Capacitance (Ciss) (Max) @ Vds 3876pF @ 25V
• Rds On (Max) @ Id, Vgs 960mOhm @ 9A, 10V
• Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
• Vgs(th) (Max) @ Id 5V @ 1mA
• Supplier Device Package SP1