- Product Model APTM100A23SCTG
- Brand Microsemi Corporation
- RoHS No
- Description MOSFET 2N-CH 1000V 36A SP4
- Classification FET, MOSFET Arrays
-
PDF
Inventory:1500
Technical Details
- Package / Case SP4
- Mounting Type Chassis Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 694W
- Drain to Source Voltage (Vdss) 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C 36A
- Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V
- Rds On (Max) @ Id, Vgs 270mOhm @ 18A, 10V
- Gate Charge (Qg) (Max) @ Vgs 308nC @ 10V
- Vgs(th) (Max) @ Id 5V @ 5mA
- Supplier Device Package SP4