- Product Model TP44110HB
- Brand Tagore Technology
- RoHS Yes
- Description GANFET 2N-CH 650V 30QFN
- Classification FET, MOSFET Arrays
-
PDF
Technical Details
- Package / Case 30-PowerWFQFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 19A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 110pF @ 400V
- Rds On (Max) @ Id, Vgs 118mOhm @ 500mA, 6V
- Gate Charge (Qg) (Max) @ Vgs 3nC @ 6V
- Vgs(th) (Max) @ Id 2.5V @ 11mA
- Supplier Device Package 30-QFN (8x10)
Related Products
MOSFET 2N-CH 650V 32A 9ACEPACK
Inventory: 222
GAN FET HEMT 650V .118OHM 22QFN
Inventory: 2969
GAN FET HEMT 650V .236OHM 22QFN
Inventory: 2983
GANFET 2N-CH 650V 30QFN
Inventory: 90
GAN FET HEMT 650V .36OHM 22QFN
Inventory: 2960
GANFET 2N-CH 650V 30QFN
Inventory: 57
