- Product Model TSM4NB65CI
- Brand TSC (Taiwan Semiconductor)
- RoHS Yes
- Description 650V, 4A, SINGLE N-CHANNEL POWER
- Classification Single FETs, MOSFETs
Inventory:1500
Technical Details
- Package / Case TO-220-3 Full Pack, Isolated Tab
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Rds On (Max) @ Id, Vgs 3.37Ohm @ 2A, 10V
- Power Dissipation (Max) 25W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Supplier Device Package ITO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 13.46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 549 pF @ 25 V