Technical Details

• Package / Case 6-WDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.9W (Ta)
• Drain to Source Voltage (Vdss) 12V
• Current - Continuous Drain (Id) @ 25°C 5A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 495pF @ 6V, 520pF @ 6V
• Rds On (Max) @ Id, Vgs 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 4.5V, 9.2nC @ 4.5V
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package 6-DFN (2x2)