Technical Details

• Package / Case 8-WDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.5W (Ta), 23W (Tc)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 13.8A (Ta), 18A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 700pF @ 15V
• Rds On (Max) @ Id, Vgs 8.5mOhm @ 20A, 10V
• Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
• Vgs(th) (Max) @ Id 2.1V @ 250µA
• Supplier Device Package 8-DFN-EP (3x3)